ELECTRON PROPERTIES IN DIRECETED SELF-ASSEMBLY GE/SIC/SI QUANTUM DOTS Artificially ordered semiconductor quantum dot (QD) patterns may be used to implement functionalities such as spintronic bandgap systems, quantum simulation and quantum computing, by manipulating the interaction between confined carriers via direct exchange coupling. In this dissertation, magnetotransport measurements have been conducted to investigate the electronic orbital and spin states of directed self-assembly single- and few-Ge/SiC/Si QD devices, fabricated by a directed self-assembly QD growth technique developed by our group. Diamagnetic and Zeeman energy shifts of electrons confined around the QD have been observed from the magnetotransport experiments. A triple-barrier resonant tunneling model has been proposed to describe the electron and spin transport. The strength of the Coulomb interaction between electrons confined at neighboring QDs has been observed dependent on the dot separation, and represents an important parameter for fabricating QD-based molecules and artificial arrays, which may be implemented as building blocks for future quantum simulation and quantum computing architectures.